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NE58633
Noise reduction class-D headphone driver amplifier
Rev. 01 -- 22 January 2009 Product data sheet
1. General description
The NE58633 is a stereo, noise reduction, class-D, Bridge-Tied Load (BTL) headphone driver amplifier. Each channel comprises a class-D BTL headphone driver amplifier, an electret microphone low noise preamplifier, feedback noise reduction circuit and a music amplifier input. The NE58633 operates with a battery voltage of 0.9 V to 1.7 V. The chip employs an on-chip DC-to-DC boost converter and internal Vref voltage reference which is filtered and output to ground for noise decoupling. It features mute control and plop and click reduction circuitry. The gain of the microphone amplifier and filter amplifier is set using external resistors. Differential architecture provides increased immunity to noise. The NE58633 is capable of driving 800 mVrms across a 16 or 32 load and provides ElectroStatic Discharge (ESD) and short-circuit protection. It is available in the 32-pin HVQFN32 (5 mm x 5 mm x 0.85 mm) package suitable for high density small-scale layouts and is an ideal choice for noise reduction headphones and educational audio aids.
2. Features
I I I I I I I I I I I I I Low current consumption of 4.4 mA 0.9 V to 1.7 V battery operating voltage range 1 % THD+N at VO = 1 VM driving 16 with a battery voltage of 1.5 V 10 % THD+N at 800 mVrms output voltage driving 16 and 32 loads with a battery voltage of 1.5 V Output noise voltage with noise reduction circuit typically 31 mVrms for Gv(cl) = 25 dB On-chip mute function Plop and click reduction circuitry Class-D BTL differential output configuration Electret microphone noise reduction polarization amplifier with external gain adjustment using resistors Music and filter amplifier with external gain adjustment using resistors DC-to-DC converter circuitry (3 V output) with 2.5 mA (typical) load current Internal voltage reference pinned out for noise decoupling Available in HVQFN32 package
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
3. Ordering information
Table 1. Ordering information Package Name NE58633BS Description Version HVQFN32 plastic thermal enhanced very thin quad flat package; SOT617-1 no leads; 32 terminals; body 5 x 5 x 0.85 mm Type number
4. Block diagram
MA_OUTR
21 internal oscillator AVDD 14, 19 18
PWM H-BRIDGE 10 k
PGNDR OUTRP OUTRN PVDDR PVDDR
MA_INRN MA_INRP NMIC_OUTR
22 23 24 Vref
1 k
15 MUTE 17 16
Vref AVDD
NMIC_INRN NMIC_INRP
25
NE58633
26
5 k
20 MUTE
VREF
AGND
27
Vref MUTE CONTROL Vref 12 MUTE
B_IN BS VBAT
28 29 30
DC-to-DC BOOST CONVERTER
Vref BUFFER AVDD
Vref
5 k
9 Vref AVDD
10 k
PVDDL PVDDL OUTLN OUTLP PGNDL
internal oscillator AVDD
8 10
NMIC_INLP
31 Vref
1 k
PWM H-BRIDGE AGND MUTE 6, 11 7
NMIC_INLN NMIC_OUTL MA_INLP MA_INLN MA_OUTL AGND
32 1 2 3 4 5
001aaj506
Fig 1.
Block diagram
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
2 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
5. Pinning information
5.1 Pinning
25 NMIC_INRN 24 NMIC_OUTR 23 MA_INRP 22 MA_INRN 21 MA_OUTR 20 VREF 19 PGNDR 18 OUTRP 17 PVDDR OUTLN 10 PGNDL 11 MUTE 12 n.c. 13 PGNDR 14 OUTRN 15 PVDDR 16 9
002aad751
NMIC_OUTL MA_INLP MA_INLN MA_OUTL AGND PGNDL OUTLP PVDDL
1 2 3 4 5 6 7 8
NE58633BS
PVDDL
Transparent top view
Fig 2.
Pin configuration for HVQFN32
5.2 Pin description
Table 2. Symbol NMIC_OUTL MA_INLP MA_INLN MA_OUTL AGND PGNDL OUTLP PVDDL OUTLN PGNDL MUTE n.c. PGNDR OUTRN PVDDR OUTRP PGNDR VREF
NE58633_1
Pin description Pin 1 2 3 4 5 6 7 8, 9 10 11 12 13 14 15 16, 17 18 19 20 Description noise reduction microphone preamplifier output, left channel music amplifier positive input, left channel music amplifier negative input, left channel music amplifier output, left channel analog ground power ground, headphone driver, left channel headphone positive output, left channel battery supply voltage, headphone driver output, left channel headphone negative output, left channel power ground, headphone driver, left channel mute, headphone outputs (active LOW) not connected internally; connect pin to ground power ground, headphone driver, right channel headphone negative output, right channel battery supply voltage, headphone driver output, right channel headphone positive output, right channel power ground, headphone driver, right channel internal voltage reference output
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
29 BS
terminal 1 index area
26 NMIC_INRP
32 NMIC_INLN
31 NMIC_INLP
27 AGND
30 VBAT
28 B_IN
3 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
Pin description ...continued Pin 21 22 23 24 25 26 27 28 29 30 31 32 Description music amplifier output, right channel music amplifier negative input, right channel music amplifier positive input, right channel noise reduction microphone preamplifier output, right channel noise reduction microphone preamplifier negative input, right channel noise reduction microphone preamplifier positive input, right channel ground, analog boost converter input boost converter switching transistor collector battery supply voltage Noise reduction microphone preamplifier positive input, left channel Noise reduction microphone preamplifier negative input, left channel
Table 2. Symbol MA_OUTR MA_INRN MA_INRP
NMIC_OUTR NMIC_INRN NMIC_INRP AGND B_IN BS VBAT NMIC_INLP NMIC_INLN
6. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Tamb = 25 C, unless otherwise specified. Symbol VBAT Parameter battery supply voltage Conditions pins VBAT, PVDDL, PVDDR in active mode in mute mode VI Tamb Tj Tstg input voltage ambient temperature junction temperature storage temperature operating operating -0.3 -0.3 -0.3 0 0 0 +1.7 +1.7 +2.0 70 150 150 V V V C C C Min Max Unit
7. Recommended operating conditions
Table 4. Symbol VBAT Vi(cm) VIH VIL Tamb Operating conditions Parameter battery supply voltage common-mode input voltage HIGH-level input voltage LOW-level input voltage ambient temperature Conditions AVDD, PVDD music and noise reduction amplifier inputs unmuted; MUTE muted; MUTE operating Min 0.9 0.2 1 0 0 Max 1.7 Vbst - 1 VBAT 0.8 70 Unit V V V V C
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
4 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
8. Characteristics
Table 5. Electrical characteristics Tamb = 25 C; unless otherwise specified. Symbol |VO(offset)| Parameter output offset voltage Conditions measured differentially; inputs AC grounded; Gv(cl) = 25 dB; VBAT = 0.9 V to 1.7 V music amplifier and noise reduction microphone amplifier; measured differentially music amplifier, non-inverting terminal; VBAT = 0.9 V to 1.7 V microphone preamplifier; VBAT = 0.9 V to 1.7 V inverting terminal noise reduction non-inverting terminal noise reduction ILI VOH input leakage current HIGH-level output voltage music amplifier; inverting terminal VBAT = 0.9 V to 1.7 V music amplifier and noise reduction microphone preamplifier; IOH = 1 mA; VBAT = 0.9 V to 1.7 V music amplifier and noise reduction microphone preamplifier; IOH = 1 mA; VBAT = 0.9 V to 1.7 V VBAT = 0.9 V to 1.7 V AC grounded; no load VBAT = 1.7 V VBAT = 1.5 V VBAT = 1.3 V VBAT = 1.05 V VBAT = 0.9 V RDSon fsw Gv(cl) Vth(mute) drain-source on-state resistance switching frequency closed-loop voltage gain mute threshold voltage VBAT = 0.9 V to 1.7 V; no load VBAT = 0.9 V to 1.7 V with noise reduction microphone circuit; VBAT = 0.9 V to 1.7 V; RF = 18 k VBAT = 0.9 V to 1.7 V LOW-level; active LOW (muted) HIGH-level; inactive HIGH (unmuted)
[1]
[1]
Min -
Typ 5
Max 25
Unit mV
|VI(offset)|
input offset voltage
-
1
-
mV
Zi
input impedance
-
10
-
k
2.6
1 5 -
500 -
k k nA V
VOL
LOW-level output voltage
-
-
0.35
V
Vref IDD
reference voltage supply current
250 -
0.5Vbst 5.0 6.0 7.0 8.0 9.0 2.8 300 25
6.0 11 350 -
V mA mA mA mA mA kHz dB
0 1.0
-
0.8 -
V V
Music amplifier at unity gain; noise preamplifier at 25 dB gain; noise preamplifier output connected to corresponding inverting input of music amplifier; non-inverting inputs.
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
5 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
Table 6. Symbol Vo
Operating characteristics Parameter output voltage variation Conditions per channel; RL = 16 ; f = 1 kHz; THD+N = 10 % VBAT = 1.7 V VBAT = 1.5 V VBAT = 1.05 V 800 800 550 Vrms Vrms Vrms Min Typ Max Unit
Po
output power
per channel; f = 1 kHz; THD+N = 10 % RL = 16 ; VBAT = 1.5 V RL = 32 ; VBAT = 1.5 V RL = 16 ; VBAT = 1.05 V 40 20 19 1.0 1.0 100 mW mW mW % % dB
THD+N
total harmonic distortion-plus-noise
Vo = 1 Vpeak; f = 1 kHz; VBAT = 1.5 V to 1.7 V Vo = 620 mVpeak; f = 1 kHz; VBAT = 1.05
Gv(ol)
open-loop voltage gain
music amplifier and noise reduction microphone preamplifier; VBAT = 1.5 V f = 1 kHz; VBAT = 1.5 V; Rg = 1 k; RL = 16 ; Vo = 800 mVrms Vbst(ripple) = 100 mVrms; Gv(cl) = 25 dB; f = 1 kHz VBAT = 0.9 V VBAT = 1.5 V
ct SVRR
crosstalk attenuation supply voltage ripple rejection
40
50
-
dB
30 -
40 60 1
-
dB dB k
Zi
input impedance
microphone preamplifier; Gv(cl) = 25 dB (from noise reduction microphone to class-D output) spectral noise; VBAT = 1.5 V; f = 20 to 20 kHz; Gv(cl) = 25 dB; Rg = 1 k VBAT = 1.5 V; f = 20 to 20 kHz; inputs AC grounded; Gv(cl) = 25 dB no weighting A weighting
Vn(i)
input noise voltage
-
12
-
nV/Hz
Vn(o)
output noise voltage
1.05 -
26 20 0.9 3.1 2.65 80
1.7 1.05 3.45 -
V V V V V mA %
DC-to-DC boost converter VI VI(startup)min Vbst Ibst(load)O bst input voltage minimum start-up input voltage boost voltage output load boost current boost efficiency VBAT = 1.05 V to 1.7 V; 2.65 mA external load VBAT = 1.05 V to 1.7 V; Vbst > 2.8 V VBAT = 1.05 V to 1.7 V; RL(tot) = 600
2.75 -
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
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NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
9. Typical performance curves
002aad921 002aad920
12 IBAT (mA) 8
3.5 Vbst (V) 3.3
3.1
2.9 4 2.7
0 0.8
1.1
1.4 VBAT (V)
1.7
2.5 0.8
1.1
1.4 VBAT (V)
1.7
Vbst = 3.14 V
Fig 3.
Battery supply current as a function of battery supply voltage
Fig 4.
Boost voltage as a function of battery supply voltage
3.20 Vbst (V) 3.15
3.10
3.05
3.00
2.95
2.90 1.70 1.50 VBAT (V) 1.30 1.25 1.20 1.15 1.10 1.05 1.00
002aad917
2.85
2.80 2.2 2.3 2.4 2.5
2.6
2.7
2.8
2.9 lbst (mA)
3.0
Fig 5.
Boost voltage, battery supply voltage and boost current 3D profile
NE58633_1
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Product data sheet
Rev. 01 -- 22 January 2009
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NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
80 (2) (%) 70
002aad922
(3)
(1)
80 (2) (%) 70
002aad926
(3)
(1)
60
60
50
50
40
40
30 0 1 2 3 4 5 RL(ext) (k)
30 0 1 2 3 4 5 RL(ext) (k)
(1) VBAT = 0.9 V (2) VBAT = 1.2 V (3) VBAT = 1.5 V
(1) VBAT = 1.0 V (2) VBAT = 1.3 V (3) VBAT = 1.6 V
a. Battery supply voltage = 0.9 V, 1.2 V and 1.5 V
80 (%) 70
b. Battery supply voltage = 1.0 V, 1.3 V and 1.6 V
002aad925
(3) (1)
(2)
60
50
40
30 0 1 2 3 4 5 RL(ext) (k)
(1) VBAT = 1.1 V (2) VBAT = 1.4 V (3) VBAT = 1.7 V
c. Battery supply voltage = 1.1 V, 1.4 V and 1.7 V Fig 6. Efficiency as a function of external load resistance; boost voltage = 3.14 V
NE58633_1
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Product data sheet
Rev. 01 -- 22 January 2009
8 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
102 THD+N ratio (%) 10
(2) (3)
002aad923
102 THD+N ratio (%)
(1) (2) (3) (4)
002aad924
10
(1)
1
(4)
1
10-1 10-5
10-4
10-3 Po (W)
10-2
10-1 10-5
10-4
10-3
10-2 Po (W)
10-1
RL = 16 speaker load + 2 x ferrite bead + 2 x 18 resistor; measured across 16 speaker; fi = 1 kHz; A-weighting filter for THD+N. (1) VBAT = 1.05 V (2) VBAT = 1.3 V (3) VBAT = 1.5 V (4) VBAT = 1.7 V
RL = 16 speaker load + 2 x ferrite bead + 2 x 18 resistor; measured across 32 speaker; fi = 1 kHz; A-weighting filter for THD+N (1) VBAT = 1.05 V (2) VBAT = 1.3 V (3) VBAT = 1.5 V (4) VBAT = 1.7 V
Fig 7.
Total harmonic distortion-plus-noise as a function of output power; 16 load
40
002aad958
Fig 8.
Total harmonic distortion-plus-noise as a function of output power; 32 load
40
002aae323
G (dB) 20
G (dB) 20
0
0
-20 1 10
102
103
104 f (Hz)
105
-20 10
102
103
104 f (Hz)
105
VNMIC_IN = 6.3 mVRMS; Vbst = 3 V; VBAT = 1.5 V
VNMIC_IN = 10 mV to 50 mV; VBAT = 1.5 V; Vbst = 3.1 V
Fig 9.
Gain as a function of frequency response of feedforward noise reduction circuit; NMIC_INx to MA_OUTx for feedforward application circuit
Fig 10. Gain as a function of frequency; NMIC_INx to MA_OUTx for feedback application circuit
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
9 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
(1)
(2)
(3)
(4)
002aad930
At start-up, no signal on music input. No pop or click. The small glitches on trace (2) are just noise from the noise reduction amplifier feed-through. Start-up delay approximately 135 ms. (1) VBAT switch ON to 1.5 V (50 ms; 1.0 V) (2) Difference between trace (3) and (4), which equates to the pop or click (0.5 ms; 0.54 V) (3) OUTLP (50 ms; 1.0 V) (4) OUTLN (50 ms; 1.0 V)
Fig 11. Power-on delay and pop-on noise performance
(1)
(2)
(3)
(4)
002aad929
(1) 50 ms; 1.0 V (2) 1 ms; 0.5 V (3) 50 ms; 1.0 V (4) 50 ms; 1.0 V
Fig 12. Pop-off click performance
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
10 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
10. Application information
10.1 General application description
The NE58633 is a stereo noise reduction IC with a boost converter output at 3.2 V with 2.5 mA load current. Using the on-chip boost converter, it operates from a single cell alkaline battery (0.9 V to 1.7 V). The NE58633 is optimized for low current consumption at 6 mA quiescent current for VBAT = 1.5 V. Each channel is comprised of a low noise preamplifier which is driven by an electret microphone, a music amplifier and class-D, BTL headphone driver amplifier (see Figure 1 "Block diagram"). The NE58633 output drivers are capable of driving 800 mVrms across 16 and 32 loads. THD+N performance is 1 % at VO = 1 VM and 10 % THD+N at 800 mVrms output voltage driving 16 at a battery voltage of 1.5 V. The internal reference voltage is set for 12 Vbst and is pinned out so it can be externally decoupled to enhance noise performance. The NE58633 differential architecture provides immunity to noise. The output noise is typically 26 Vrms for Gv(cl) = 25 dB. The NE58633 provides ESD and short-circuit protection. It features mute control and plop and click reduction circuitry. As shown in the application circuit schematics (Figure 13 and Figure 14), the NE58633 may be used for Active Noise Reduction (ANR) in either feedforward or feedback noise-cancelling headphones and earphones in consumer and industrial applications. The gain and filter characteristics of the ANR circuit are set using external resistors and capacitors.
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
11 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
10 nF 22 k
10 k 2.2 k
21 MA_OUTR internal oscillator AVDD 23 MA_INRP PWM 22 MA_INRN H-BRIDGE
PGNDR 14 PGNDR 19
10 nF
OUTRN 15
FB 18 18 right speaker
OUTRP 18 FB MUTE
10 nF
100 nF
47 k
24 NMIC_OUTR
10 k 10 nF 10 k 22 k
PVDDR 17 AVDD PVDDR 16
1 F
25 NMIC_INRN 26 NMIC_INRP
4.7 k 1 F
VBAT
NE58633
27 AGND VREF AVDD MUTE CONTROL AVDD MUTE 12
1 F
switch shown in OFF position
OFF
28 B_IN
1 k 100 F
29 BS 30 VBAT
10 F
DC-to-DC BOOST CONVERTER
20
1 F
VBAT
4.7 k
right audio input 270
1 F 560
31 NMIC_INLP
1 F 10 k 10 nF 10 k 100 nF 47 k
PVDDL 9 PVDDL 8
32 NMIC_INLN
22 k
AGND AVDD
internal oscillator OUTLN 10 PWM
1 F
1 NMIC_OUTL 2 MA_INLP
power switch ON
270 560
1 F
10 nF FB FB 18 18 left audio input left speaker
H-BRIDGE 3 MA_INLN
10 nF 10 k 2.2 k 22 k
OUTLP 7
MUTE 10 nF PGNDL 6 4 MA_OUTL PGNDL 11 5 AGND
001aaj507
Fig 13. NE58633 feedback application schematic
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
12 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
47 nF 1.8 k 3.3 k
21 MA_OUTR internal oscillator AVDD 23 MA_INRP PWM 22 MA_INRN H-BRIDGE
PGNDR 14 PGNDR 19
27 nF
OUTRN 15
FB 18 18 right speaker
OUTRP 18 FB MUTE
27 nF
330 nF
3.3 k 3.3 k 10 nF 22 k 8.2 k
24 NMIC_OUTR AVDD
PVDDR 17 PVDDR 16
1 F
25 NMIC_INRN 26 NMIC_INRP
VBAT
6.8 k
1 F
NE58633
27 AGND VREF AVDD MUTE CONTROL AVDD 31 NMIC_INLP MUTE 12
1 F
switch shown in OFF position
OFF
28 B_IN
1 k 100 F
29 BS 30 VBAT
DC-to-DC BOOST CONVERTER
20
1 F
VBAT
6.8 k 10 F
right audio input 560
1 F 390
PVDDL 9 PVDDL 8
1 F power switch ON 560 390
1 F
32 NMIC_INLN
8.2 k 10 nF 330 nF 3.3 k 3.3 k 22 k
AGND AVDD
internal oscillator OUTLN 10 PWM
27 nF FB FB 18 18
1 NMIC_OUTL 2 MA_INLP
1 F
left audio input left speaker
H-BRIDGE 3 MA_INLN
OUTLP 7
47 nF 1.8 k 3.3 k
MUTE 27 nF PGNDL 6 PGNDL 11
4 MA_OUTL 5 AGND
001aaj508
Fig 14. NE58633 feedforward application schematic
NE58633_1
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Product data sheet
Rev. 01 -- 22 January 2009
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NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
10.2 Power supply decoupling
The power supply pins B_IN, PVDDL and PVDDR are decoupled with 1 F capacitors directly from the pins to ground.
10.3 Speaker output filtering considerations
The ferrite beads form a low-pass filter with a shunt capacitor to reduce radio frequency > 1 MHz. Choose a ferrite bead with high-impedance at high frequencies and low-impedance at low frequencies. A typical ferrite bead is 600 at 100 MHz. The low frequency impedance is not as important as in power amplifiers because headphone speakers are stabilized with a series impedance of about 18 on each output. A shunt capacitor is added to complete the low-pass filter.
10.4 Boost converter and layout considerations
10.4.1 Boost converter operation
The boost converter operates in asynchronous mode as shown in Figure 15. As VBAT drops, the boost converter efficiency decreases (see Figure 3 and Figure 6). The boost converter is capable of driving 2.65 mA external load (see Figure 5). If the NE58633 is operated without the boost converter, pins B_IN, PVDDL and PVDDR may be powered directly from a 3 V power supply source such as 2 AAA alkaline batteries. The VBAT pin is not used.
(1)
(2)
(3)
2 Gs/s
002aad957
(1) Positive or negative output of the class-D driver with VBAT at 1.5 V. (2) Pin BS (VBS = Vbst). Remark: This is a normal pulse. It does not change with VBAT but remains at the level of the boosted voltage. (3) Current at pin B_IN (Ibst(load)O) measures approximately 40 mA peak, but averaged DC current is a few milliamperes per the specification.
Fig 15. Switching waveform at the BS pin
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Product data sheet
Rev. 01 -- 22 January 2009
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NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
10.4.2 Critical layout consideration and component selection
The trace between pin BS and the switching inductor must be kept as short as possible. The VBAT side of the boost switching inductor is decoupled by use of a low Equivalent Series Resistance (ESR) 10 F, 6 V capacitor. A power inductor with low ESR (typically 50 m) should be used. The boost inductor must be 22 H minimum and 47 H maximum to ensure proper operation. Pin B_IN is decoupled by use of a 1 F capacitor directly at the pin with 33 F to 47 F at the Vbst output at the Schottky diode.
10.5 Mute
Mute may be invoked by directly grounding the pin with a momentary switch. The MUTE pin is active LOW. The outputs are muted automatically when VBAT is less than or equal to 0.9 V. The MUTE pin is decoupled to ground with a 1 F capacitor.
10.6 Internal reference, VREF pin
The internal reference is pinned out so it can be filtered with a capacitor to ground. The recommended value is 1 F to 10 F. Ensure that the biasing time constant at pin VREF does not exceed the power-on delay time or a pop-on click will heard.
10.7 Power-on delay time and pop and click performance
Power-on delay time of typically 135 ms is imposed to allow the input biasing to power-up and stabilize. This eliminates pop-on noise.
10.8 Active Noise Reduction (ANR) concepts
10.8.1 Basic concept
Noise reduction headphones utilize Passive Noise Reduction (PNR) provided by the passive noise reduction of the headphone acoustical plant alone. The amount of PNR is greatest at the high frequencies and least at the low frequencies. The addition of Active Noise Reduction (ANR) greatly increases the amount of noise reduction at low frequencies. The combined effect of PNR and ANR provides noise reduction over an appreciable hearing range. Figure 16 shows the combined effect of both PNR and ANR in an over-the-ear noise-cancelling FB headphone.
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
15 of 25
NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
10 (dB) 0 -10 -20 -30 -40 102
002aad911
10 (dB) 0 -10 -20 -30 -40 102
002aad912
103 f (Hz)
104
103 f (Hz)
104
a. Passive attenuation left
10 (dB) 0 -10 -20 -30 -40 102
002aad913
b. Passive attenuation right
10 (dB) 0 -10 -20 -30 -40 102
002aad914
103 f (Hz)
104
103 f (Hz)
104
c. Total attenuation left
10 (dB) 0 -10 -20 -30 -40 102
002aad915
d. Total attenuation right
10 (dB) 0 -10 -20 -30 -40 102
002aad916
103 f (Hz)
104
103 f (Hz)
104
e. Active attenuation left
f. Active attenuation right
Fig 16. Combined noise reduction (PNR + ANR) of typical over-the-ear FB application
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Product data sheet
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NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
10.8.2 Feedforward circuit
10.8.2.1 Conceptual diagram of feedforward application Figure 17 shows the typical feedforward application diagram in which the noise cancelling microphone samples the noise outside the acoustic plant of the headphone or earphone.
external noise human head E electronic compartment ear
noise detection microphone
-2
FILTER AMP
H.P. driver transducer (speaker)
NE58633
acoustic compartment or plant
headphone shell or body
002aad927
Fig 17. Feedforward conceptual diagram
This method produces a noise-cancelling signal that tries to replicate the noise in the acoustical plant at the loudspeaker and entrance to the ear. The replication is never exact because the microphone is located outside the headphones; the noise sampled is not a perfect replica of the noise inside the ear cup, which is altered by passing through the ear cup as well as by the internal reflections. In fact, in some cases the anti-noise may actually introduce noise inside the headphones. The headphone loudspeaker or transducer is used to send the normal audio signal as well as the feedforward signal providing noise cancellation. The microphone detects the external noise and its output is amplified and filtered, and phase is inverted by the low noise preamplifier and music amplifier in the NE58633. 10.8.2.2 Feedforward demo board schematic The evaluation demo board uses a typical filter design and may not yield the optimal noise cancelling performance for a given headphone mechanical-acoustical plant.
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(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
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NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
10.8.3 Feedback circuit
10.8.3.1 Conceptual diagram of feedback application Figure 18 shows the typical feedback application diagram in the which the noise cancelling microphone samples the noise and music inside the acoustical plant.
acoustic compartment or plant noise detection microphone electronic compartment
human head
ear
-2
FILTER AMP
H.P. driver transducer (speaker) E headphone shell or body external noise
NE58633
002aad928
Fig 18. Feedback conceptual diagram
The feedback solution employs a low cost, battery operated analog Active Noise Reduction (ANR) technique. The topology uses negative feedback circuitry in which the noise reduction microphone is placed close to the ear and headphone loudspeaker. By detecting the noise with the microphone in the position closer to the ear, a noise cancelling effect with high accuracy is realized. This technique produces a noise cancelling signal that always minimizes the noise in the ear canal or entrance to the ear canal. The audio signal is analyzed with exact timing with the noise cancelling signal. The noise cancelling signal increases with increasing noise level. The headphone loudspeaker or transducer is used to send the normal audio signal as well as the feedback signal providing noise cancellation. The microphone is placed near the loudspeaker and its output is amplified, filtered, and phase inverted by the feedback network and sent back to the loudspeaker. The design of the feedback filter for a given headphone plant involves a trade-off between performance on one hand and stability and robustness with respect to variations of the headphone plant on the other. Traditional feedback design methods use filter elements such as, lead, lag and notch filters which are appropriately tuned to shape the audio response of the system to obtain good performance with sufficient stability margins.
NE58633_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
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NE58633
Noise reduction class-D headphone driver amplifier
Since the attenuation performance of an analog ANR headphone is defined in the design stage, it has limited applicability to work in different environments. Overall noise cancelling performance is achieved by first characterizing the passive attenuation of headphone plant and then designing the ANR circuitry to obtain the optimal overall noise reduction performance and stability. Figure 16 shows combined noise reduction results of typical over-the-ear feedback headphone. The combined noise reduction is the sum of the PNR of the plant and the active noise reduction of the feedback filter circuit. 10.8.3.2 Feedback demo board schematic The evaluation demo board embodies a typical filter design and may not yield the optimal noise cancelling performance for a given headphone mechanical-acoustical plant.
11. Test information
15 H
AP585 AUDIO ANALYZER
INxP
OUTxP DUT
RL 15 H
INxN
OUTxN
AUX0025 30 kHz LOW-PASS FILTER
+
- AP585 MEASUREMENT INPUTS
002aad417
POWER SUPPLY
Fig 19. NE58633 test circuit
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Product data sheet
Rev. 01 -- 22 January 2009
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NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
12. Package outline
HVQFN32: plastic thermal enhanced very thin quad flat package; no leads; 32 terminals; body 5 x 5 x 0.85 mm
SOT617-1
D
B
A
terminal 1 index area E
A A1 c
detail X
e1 e 9 L 8 17 e
1/2 e
C b 16 vMCAB wMC y1 C y
Eh
1/2 e
e2
1 terminal 1 index area
24 32 Dh 0 2.5 scale E (1) 5.1 4.9 Eh 3.25 2.95 e 0.5 e1 3.5 e2 3.5 L 0.5 0.3 v 0.1 w 0.05 y 0.05 y1 0.1 5 mm 25 X
DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max. 1 A1 0.05 0.00 b 0.30 0.18 c 0.2 D (1) 5.1 4.9 Dh 3.25 2.95
Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT617-1 REFERENCES IEC --JEDEC MO-220 JEITA --EUROPEAN PROJECTION ISSUE DATE 01-08-08 02-10-18
Fig 20. Package outline SOT617-1 (HVQFN32)
NE58633_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
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NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
13. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 "Surface mount reflow soldering description".
13.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization.
13.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following:
* Through-hole components * Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are:
* * * * * *
Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering
13.3 Wave soldering
Key characteristics in wave soldering are:
* Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are exposed to the wave
* Solder bath specifications, including temperature and impurities
NE58633_1 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
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NXP Semiconductors
NE58633
Noise reduction class-D headphone driver amplifier
13.4 Reflow soldering
Key characteristics in reflow soldering are:
* Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 21) than a SnPb process, thus reducing the process window
* Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
* Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 7 and 8
Table 7. SnPb eutectic process (from J-STD-020C) Package reflow temperature (C) Volume (mm3) < 350 < 2.5 2.5 Table 8. 235 220 Lead-free process (from J-STD-020C) Package reflow temperature (C) Volume (mm3) < 350 < 1.6 1.6 to 2.5 > 2.5 260 260 250 350 to 2000 260 250 245 > 2000 260 245 245 350 220 220
Package thickness (mm)
Package thickness (mm)
Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 21.
NE58633_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
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NE58633
Noise reduction class-D headphone driver amplifier
temperature
maximum peak temperature = MSL limit, damage level
minimum peak temperature = minimum soldering temperature
peak temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 21. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365 "Surface mount reflow soldering description".
14. Abbreviations
Table 9. Acronym ANR BTL DUT ESD ESR FB RMS PNR PWM Abbreviations Description Active Noise Reduction Bridge Tied Load Device Under Test ElectroStatic Discharge Equivalent Series Resistance FeedBack Root Mean Squared Passive Noise Reduction Pulse Width Modulation
15. Revision history
Table 10. Revision history Release date 20090122 Data sheet status Product data sheet Change notice Supersedes Document ID NE58633_1
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(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
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Noise reduction class-D headphone driver amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
16.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
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(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 22 January 2009
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Noise reduction class-D headphone driver amplifier
18. Contents
1 2 3 4 5 5.1 5.2 6 7 8 9 10 10.1 10.2 10.3 10.4 10.4.1 10.4.2 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performance curves . . . . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . 11 General application description . . . . . . . . . . . 11 Power supply decoupling . . . . . . . . . . . . . . . . 14 Speaker output filtering considerations. . . . . . 14 Boost converter and layout considerations . . . 14 Boost converter operation. . . . . . . . . . . . . . . . 14 Critical layout consideration and component selection. . . . . . . . . . . . . . . . . . . . 15 10.5 Mute . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 10.6 Internal reference, VREF pin . . . . . . . . . . . . . 15 10.7 Power-on delay time and pop and click performance . . . . . . . . . . . . . . . . . . . . . . . . . . 15 10.8 Active Noise Reduction (ANR) concepts . . . . 15 10.8.1 Basic concept . . . . . . . . . . . . . . . . . . . . . . . . . 15 10.8.2 Feedforward circuit . . . . . . . . . . . . . . . . . . . . . 17 10.8.2.1 Conceptual diagram of feedforward application. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 10.8.2.2 Feedforward demo board schematic . . . . . . . 17 10.8.3 Feedback circuit . . . . . . . . . . . . . . . . . . . . . . . 18 10.8.3.1 Conceptual diagram of feedback application. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 10.8.3.2 Feedback demo board schematic. . . . . . . . . . 19 11 Test information . . . . . . . . . . . . . . . . . . . . . . . . 19 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 20 13 Soldering of SMD packages . . . . . . . . . . . . . . 21 13.1 Introduction to soldering . . . . . . . . . . . . . . . . . 21 13.2 Wave and reflow soldering . . . . . . . . . . . . . . . 21 13.3 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 21 13.4 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 22 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 23 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 23 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 24 16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 24 16.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 16.3 16.4 17 18 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 24 24 25
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 January 2009 Document identifier: NE58633_1

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